人工晶体学报2007，Vol.36Issue(3)：646-649,686,5.
高气压下微晶硅薄膜的生长及微结构研究
Growth and Microstructures of Microcrystalline Silicon Thin Films under High Pressures
摘要
Abstract
Microcrystalline silicon thin films were deposited under high deposition pressures using radio frequency plasma enhanced chemical vapor deposition (RF PECVD). Microstructures were studied using Raman, scanning electron microscopy (SEM). It is found that deposition rate shows a maximum at around 5Torr. The crystalline volume ratio decreases with the deposition pressure increasing. Larger grains or clusters are observed as pressure decreases. The films become less poros as pressure increases.关键词
等离子体增强化学气相沉积/微晶硅薄膜/高气压/高速沉积/微观结构Key words
PECVD/μc-Si:H/high pressure/high rate deposition/microstructure分类
数理科学引用本文复制引用
杨根,张丽伟,卢景霄,谷锦华,陈永生,文书堂,汪昌州,王子健..高气压下微晶硅薄膜的生长及微结构研究[J].人工晶体学报,2007,36(3):646-649,686,5.基金项目
The project supported by the National Basic Research Program(No.2006CB202601)(973 Program) （No.2006CB202601）
