An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laserOA北大核心CSCDCSTPCD
An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser
A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimi…查看全部>>
A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compens…查看全部>>
Chong Feng;Wang Jun;Xiong Cong;Wang Cuiluan;Han Lin;Wu Peng;Wang Guan;Ma Xiaoyu
Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,ChinaInstitute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,ChinaInstitute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,ChinaInstitute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,ChinaInstitute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,ChinaInstitute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,ChinaInstitute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,ChinaInstitute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
电子信息工程
asymmetric broad waveguidehigh power conversion efficiencystrain-compensated quantum well
asymmetric broad waveguidehigh power conversion efficiencystrain-compensated quantum well
《半导体学报》 2009 (6)
64-67,4
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