半导体学报2005，Vol.26Issue(4)：651-655,5.
超薄氮氧叠层栅介质的金属栅pMOS电容的电学特性
Electrical Properties of Ultra Thin Nitride/Oxynitride Stack Dielectrics pMOS Capacitor with Refractory Metal Gate
钟兴华 1吴峻峰 1杨建军 1徐秋霞1
作者信息
- 1. 中国科学院微电子研究所,北京,100029
- 折叠
摘要
Abstract
Electrical properties of high quality ultra thin nitride/oxynitride(N/O)stack dielectrics pMOS capacitor with refractory metal gate electrode are investigated,and ultra thin (＜2 nm) N/O stack gate dielectrics with signifi cant low leakage current and high resistance to boron penetration are fabricated. Experiment results show that the stack gate dielectric of nitride/oxynitride combined with improved sputtered tungsten/titanium nitride (W/TiN) gate electrode is one of the candidates for deep sub-micron metal gate CMOS devices.关键词
等效氧化层厚度/氮化硅/氮氧化硅复合叠层栅介质/高k/硼穿通/金属栅Key words
equivalent oxide thickness/nitride/oxynitride gate dielectric stack/high k/boron-penetration/metal gate分类
信息技术与安全科学引用本文复制引用
钟兴华,吴峻峰,杨建军,徐秋霞..超薄氮氧叠层栅介质的金属栅pMOS电容的电学特性[J].半导体学报,2005,26(4):651-655,5.
