半导体学报2001，Vol.22Issue(5)：652-655,4.
基于半导体光放大器临界激射状态的同相波长转换
In-Phase Wavelength Conversion in Semiconductor Optical Amplifier in Critical Lasing State
张新亮 1孙军强 1刘德明 1黄德修 1易河清2
作者信息
- 1. 华中理工大学光电子工程系,
- 2. 武汉邮电科学研究院,
- 折叠
摘要
Abstract
In-phase wavelength conversion based on critical lasing state in a semiconductor optical amplifier has been demonstrated.The facet residual reflectivity of the SOA is only 10-4 order that is not low enough to achieve an absolute travelling-wave amplification at large biased current,and the SOA will become a quasi-laser at certain biased current.SOA working in this critical state,the gain of the CW probe signal would be modulated by the competition between the amplified spontaneous emission and the amplification of the input signals.This conversion mechanism serves to achieve the wavelength conversion with simple structure and preferable extinction ratio performance.Whereas,it shows that its conversion efficiency and noise performance are not so good,compared with the traditional XGM wavelength conversion scheme.关键词
光放大器/波长转换分类
信息技术与安全科学引用本文复制引用
张新亮,孙军强,刘德明,黄德修,易河清..基于半导体光放大器临界激射状态的同相波长转换[J].半导体学报,2001,22(5):652-655,4.
