半导体学报2009，Vol.30Issue(2)：65-68,4.DOI:10.108811674-4926130121025005
A 6 GHz high power and low phase noise VCO using an InGaP/GaAs HBT
A 6 GHz high power and low phase noise VCO using an InGaP/GaAs HBT
王显泰 1申华军 1金智 1陈延湖 1刘新宇1
作者信息
- 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- 折叠
摘要
Abstract
A 6 GHz voltage controlled oscillator (VCO) optimized for power and noise performance was designed and characterized. This VCO was designed with the negative-resistance (Neg-R) method, utilizing an InGaP/GaAs hetero-junction bipolar transistor in the negative-resistance block. A proper output matching network and a high Q stripe line resonator were used to enhance output power and depress phase noise. Measured central frequency of the VCO was 6.008 GHz. The tuning range was more than 200 MHz. At the central frequency, an output power of 9.8 dBm and phase noise of -122.33 dBc/Hz at 1 MHz offset were achieved, the calculated RF to DC efficiency was about 14%, and the figure of merit was -179.2 dBc/Hz.关键词
VCO/ C-band/ InGaP/GaAs HBT/ low phase noise/ high power/ efficiencyKey words
VCO/ C-band/ InGaP/GaAs HBT/ low phase noise/ high power/ efficiency分类
信息技术与安全科学引用本文复制引用
王显泰,申华军,金智,陈延湖,刘新宇..A 6 GHz high power and low phase noise VCO using an InGaP/GaAs HBT[J].半导体学报,2009,30(2):65-68,4.
