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Theoretical analysis and an improvement method of the bias effect on the linearity of RF linear power amplifiers

Wu Tuo Chen Hongyi Qian Dahong

半导体学报2009,Vol.30Issue(5):65-71,7.
半导体学报2009,Vol.30Issue(5):65-71,7.DOI:10.1088/1674-4926/30/5/055002

Theoretical analysis and an improvement method of the bias effect on the linearity of RF linear power amplifiers

Theoretical analysis and an improvement method of the bias effect on the linearity of RF linear power amplifiers

Wu Tuo 1Chen Hongyi 1Qian Dahong2

作者信息

  • 1. Institute of Microelectronics, Tsinghua University, Beijing 100084, China
  • 2. Accel Semiconductor Corp, Shanghai 201203, China
  • 折叠

摘要

Abstract

Based on the Gummel-Poon model of BJT, the change of the DC bias as a function of the AC input signal in RF linear power amplifiers is theoretically derived, so that the linearity of different DC bias circuits can be interpreted and compared. According to the analysis results, a quantitative adaptive DC bias circuit is proposed,which can improve the linearity and efficiency. From the simulation and test results, we draw conclusions on how to improve the design of linear power amplifier.

关键词

bipolar/large-signal model/DC bias/linearity/adaptive bias

Key words

bipolar/large-signal model/DC bias/linearity/adaptive bias

分类

信息技术与安全科学

引用本文复制引用

Wu Tuo,Chen Hongyi,Qian Dahong..Theoretical analysis and an improvement method of the bias effect on the linearity of RF linear power amplifiers[J].半导体学报,2009,30(5):65-71,7.

半导体学报

OA北大核心CSCDCSTPCDEI

1674-4926

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