半导体学报2001，Vol.22Issue(5)：660-663,4.
0.5μm SOI CMOS器件和电路
0.5μm Partially Depleted CMOS/SOI Device and Circuit
摘要
Abstract
The partially depleted CMOS/SOI device and circuit with channel length of 0.5μm have been studied,and the Complete 0.5μm CMOS/SOI technology been developed as well.Well-behaved devices and circuits are obtained,with the per-stage propagation delay of 101-stage 0.5μm CMOS/SOI ring oscillator being 42ps under 3V supply voltage.Some characteristics of the partially depleted CMOS/SOI device are also discussed,such as “float-body” effect,“kink” effect,and anomalous subthreshold characteristics,etc.关键词
部分耗尽/“浮体”效应/反常亚阈值特性分类
信息技术与安全科学引用本文复制引用
刘新宇,孙海峰,海朝和,吴德馨..0.5μm SOI CMOS器件和电路[J].半导体学报,2001,22(5):660-663,4.
