半导体学报2005，Vol.26Issue(4)：662-666,5.
基于同一外延层结构的10Gb/s单片集成光发射模块
10Gb/s EML Module Based on Identical Epitaxial Layer Scheme
摘要
Abstract
A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme. Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser, while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance. The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at -2V bias. The small signal modulation bandwidth is measured to be over 10GHz. The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 10-12 after transmission through 35km single mode fiber.关键词
分布反馈激光器/电吸收调制器/光子集成回路/增益耦合Key words
DFB lasers/EA modulators/photonic integrated circuit/gain-coupling分类
信息技术与安全科学引用本文复制引用
孙长征,祝宁华,熊兵,王健,蔡鹏飞,田建柏,罗毅,刘宇,谢亮,张家宝..基于同一外延层结构的10Gb/s单片集成光发射模块[J].半导体学报,2005,26(4):662-666,5.基金项目
国家自然科学基金(批准号:60223001,60244001,60290084),国家高技术研究发展计划(批准号:2001AA312190和2002AA31119Z)及国家重点基础研究发展规划(批准号:G2000-03-6601)资助项目 （批准号:60223001,60244001,60290084）
