半导体学报2008，Vol.29Issue(4)：663-667,5.
不同温度下半导体硅势垒的正向I-V特性曲线的汇聚特性
The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures
摘要
Abstract
The I-V-(T) characteristic curves of p-n junctions with the forward voltage as the independent variable, the logarithm of forward current as the dependent variable, and the junction temperature as the parameter, almost converge at one point in the first quadrant. The voltage corresponding with the convergence point nearly equals the bandgap of the semiconductor material. This convergence point can be used to obtain the I-V characteristic curve at any temperature.关键词
半导体势垒/禁带宽度/汇聚点/正向I-V特性曲线Key words
semiconductor barrier/ bandgap/ convergent point/ forward I-V characteristic curves分类
信息技术与安全科学引用本文复制引用
苗庆海,卢烁今,张兴华,宗福建,朱阳军..不同温度下半导体硅势垒的正向I-V特性曲线的汇聚特性[J].半导体学报,2008,29(4):663-667,5.基金项目
国家自然科学基金资助项目(批准号:60476039) （批准号:60476039）
Project supported by the National Natural Science Foundation of China (No. 60476039) （No. 60476039）
