半导体学报2007，Vol.28Issue(5)：665-669,5.
90nm pMOSFETs NBTI退化模型及相关机理
Models and Related Mechanisms of NBTI Degradation of 90nm pMOSFETs
摘要
Abstract
We investigate the negative bias temperature instability(NBTI)of 90nm pMOSFETs under various temperatures and stress gate voltages(Vg).We also study models of the time(t),temperature(T),and stress Vg dependence of 90nm pMOSFETs NBTI degradation.The time model and temperature model are similar to previous studies,with small difference in the key coefficients.A power-law model is found to hold for Vg,which is different from the conventional exponential Vg model.The new model is more predictive than the exponential model when taking lower stress Vg into account.关键词
NBTI/90nm/pMOSFETs/模型Key words
NBTI/90nm/pMOSFETs/model分类
信息技术与安全科学引用本文复制引用
曹艳荣,马晓华,郝跃,于磊,朱志炜,陈海峰..90nm pMOSFETs NBTI退化模型及相关机理[J].半导体学报,2007,28(5):665-669,5.基金项目
国家自然科学基金(批准号:60376024)和国家高技术研究发展计划(批准号:2003AA1Z1630)资助项目 Project supported by the National Natural Science Foundation of China(No.60376024)and the National High Technology Research and Development Program of China(No.2003AA1Z1630) （批准号:60376024）
