半导体学报2005，Vol.26Issue(4)：667-671,5.
FinFET器件的集约阈电压模型
Compact Threshold Voltage Model for FinFETs
摘要
Abstract
A 2D analytical electrostatics analysis for the cross-section of a FinFET (or tri-gate MOSFET) is per formed to calculate the threshold voltage. The analysis results in a modified gate capacitance with a coefficient H in troduced to model the effect of tri-gates and its asymptotic behavior in 2D is that for double-gate MOSFET. The potential profile obtained analytically at the cross-section agrees well with numerical simulations. A compact threshold voltage model for FinFET, comprising quantum mechanical effects, is then proposed. It is concluded that both gate capacitance and threshold voltage will increase with a decreased height,or a decreased gate-oxide thickness of the top gate,which is a trend in FinFET design.关键词
FinFET器件/二维解析静电学分析/集约模型/阈电压Key words
FinFET/2D analytical electrostatic analysis/compact model/threshold voltage分类
信息技术与安全科学引用本文复制引用
张大伟,田立林,余志平..FinFET器件的集约阈电压模型[J].半导体学报,2005,26(4):667-671,5.基金项目
国家高技术研究发展计划资助项目(批准号:2003AA1Z1370) （批准号:2003AA1Z1370）
