半导体学报2008，Vol.29Issue(4)：672-676,5.
GaAs PIN二极管的新等效电路模型
A Novel Equivalent Circuit Model of GaAs PIN Diodes
摘要
Abstract
A novel equivalent circuit model for a GaAs PIN diode is presented based on physical analysis. The diode is divided into three parts., the p+ n- junction, the I-layer, and the n- n+ junction, which are modeled separately. The entire model is then formed by combining the three sub-models. In this way, the model's accuracy is greatly enhanced. Furthermore, the corresponding parameter extraction method is easy, requiring no rigorous experiment or measurement. To validate this newly proposed model, fifteen groups of diodes are fabricated. Measurement shows that the model exactly represents behavior of GaAs PIN diodes under both forward and reversely biased conditions.关键词
GaAs PIN二极管/模型/参数提取Key words
GaAs PIN diodes/ model/ parameter extraction分类
信息技术与安全科学引用本文复制引用
吴茹菲,张海英,尹军舰,李潇,刘会东,刘训春..GaAs PIN二极管的新等效电路模型[J].半导体学报,2008,29(4):672-676,5.基金项目
国家自然科学基金(批准号:10002909)和国家重点基础研究发展规划(批准号:G2002CB311901)资助项目 （批准号:10002909）
Project supposed by the National Natural Science Foundation of China (No. 10002909) and the State Key Development Program for Basic Research of China (No. G2002CB311901) （No. 10002909）
