半导体学报2007，Vol.28Issue(5)：681-685,5.
Si-SiGe材料三维CMOS集成电路技术研究
Study on Si-SiGe Three-Dimensional CMOS Integrated Circuits
摘要
Abstract
Based on the physical characteristics of SiGe material,a new three-dimensional (3D) CMOS IC structure is proposed,in which the first device layer is made of Si material for nMOS devices and the second device layer is made of SixGe1-x material for pMOS.The intrinsic performance of ICs with the new structure is then limited by Si nMOS.The electrical characteristics of a Si-SiGe 3D CMOS device and inverter are all simulated and analyzed by MEDICI.The simulation results indicate that the Si-SiGe 3D CMOS ICs are faster than the Si-Si 3D CMOS ICs.The delay time of the 3D Si-SiGe CMOS inverter is 2～3ps,which is shorter than that of the 3D Si-Si CMOS inverter.关键词
Si-SiGe/三维/CMOS/集成电路Key words
Si-SiGe/three-dimensional/CMOS/integrated circuits分类
电子信息工程引用本文复制引用
胡辉勇,张鹤鸣,贾新章,戴显英,宣荣喜..Si-SiGe材料三维CMOS集成电路技术研究[J].半导体学报,2007,28(5):681-685,5.基金项目
国家预研基金资助项目(批准号:51308040203,51408061105DZ0171) Project supported by the National Pre-Research Foundation of China(Nos.51308040203,51408061105DZ0171) （批准号:51308040203,51408061105DZ0171）
