半导体学报2003，Vol.24Issue(7)：687-692,6.
基于多孔硅牺牲层技术的压阻式加速度传感器的分析和设计
Analysis and Design of an Accelerometer Fabricated with Porous Silicon as Sacrificial Layer
摘要
Abstract
A piezoresistive silicon accelerometer fabricated by a selective,self-stopping porous silicon (PS) etching method using an epitaxial layer for movable microstructures is described and analyzed.The technique is capable of constructing a microstructure precisely.PS is used as a sacrificial layer,and releasing holes are etched in the film.TMAH solution with additional Si powder and (NH4)2S2O8 is used to remove PS through the small releasing holes without eroding uncovered Al.The designed fabrication process is full compatible with standard CMOS process.关键词
加速度传感器/多孔硅/微加工/牺牲层/微机电系统Key words
accelerometer/porous silicon/micromachining/sacrificial layer/MEMS分类
信息技术与安全科学引用本文复制引用
周俊,王晓红,姚朋军,董良,刘理天..基于多孔硅牺牲层技术的压阻式加速度传感器的分析和设计[J].半导体学报,2003,24(7):687-692,6.基金项目
国家重点基础研究发展规划(No.G1999033108)及清华大学985基础研究基金(No.199925001)资助项目 （No.G1999033108）
