液晶与显示2008，Vol.23Issue(6)：688-691,4.
a-Si TFT LCD过孔尺寸的缩减
Via Hole Reduction for a-Si TFT LCD
董杰 1金相起 1朴范求 1金浩熙1
作者信息
- 1. 北京京东方光电科技有限公司,北京,100176,China
- 折叠
摘要
Abstract
In order to improve the aperture ratio of TFT LCD, the size of via hole is studied by optimizing the deposition temperature of the passivation layer. When the passivation layer is deposited at higher temperature, the etch rate of via hole decreased and the via hole size ten-ded to smaller. The size of via hole is 8.20 μm with the passivation layer deposited at 360 ℃.关键词
钝化层/沉积温度/过孔尺寸Key words
passivation layer/ deposition temperature/ via hole size分类
信息技术与安全科学引用本文复制引用
董杰,金相起,朴范求,金浩熙..a-Si TFT LCD过孔尺寸的缩减[J].液晶与显示,2008,23(6):688-691,4.
