半导体学报2001，Vol.22Issue(1)：69-73,5.
电荷泵法研究FLASH擦工作时带带隧穿引起的界面损伤
Charge Pumping Measurement for Determing Band-to-Band-Tunneling Induced Interface Damage During Erasing Operation of FLASH
苏昱 1朱钧 1陈宇川 1潘立阳 1刘志弘1
作者信息
摘要
Abstract
A charge pumping method is proposed for the measurement of hole-induced interface states and trapped charges due to band-to-band-tunneling the effects during the erasing operation of FLASH.These charges affect the long reliability of ICs.The spatial distribution of surface states and trapped charges are directly determined by the variation of the charge-pumping current before and after applying stress.Theoretical and experimental bases are provided for the cell design of FLASH and the improvement in reliability.关键词
带带隧穿/电荷泵/倍增因子分类
数理科学引用本文复制引用
苏昱,朱钧,陈宇川,潘立阳,刘志弘..电荷泵法研究FLASH擦工作时带带隧穿引起的界面损伤[J].半导体学报,2001,22(1):69-73,5.
