半导体学报2003，Vol.24Issue(7)：697-701,5.
离子注入4H-SiC MESFET器件的夹断电压
Theoretical Investigation of Pinch off Voltage of Box-Like Ion-Implanted 4H-SiC MESFETs
摘要
Abstract
A precise theoretical calculation off the pinch of voltage of the box-like ion implantation 4H-SiC MESFETs is investigated with the consideration of the effects of the ion-implanted channel and the depth of MESFETs channel.The implant depth profile is simulated using the Monte Carlo simulator TRIM.The effects of parameters such as temperature,acceptor density,and activation rate on channel depth a,pinch off voltage are studied.关键词
碳化硅/离子注入/MESFET/夹断电压Key words
silicon carbide/ion implantation/MESFET/pinch off voltage分类
信息技术与安全科学引用本文复制引用
王守国,张义门,张玉明..离子注入4H-SiC MESFET器件的夹断电压[J].半导体学报,2003,24(7):697-701,5.基金项目
国防预研基金资助项目(项目号:8.1.7.3) （项目号:8.1.7.3）
