半导体学报2002，Vol.23Issue(7)：707-712,6.
GaN/GaAs(001)外延薄膜的湿法腐蚀特性
Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE
摘要
Abstract
Wet etching characteristics of cubic GaN (c-GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated.The samples are etc hed in HCl,H3PO4,KOH aqueous solutions,and molten KOH at temperatures in th e range of 90～300℃.It is found that different solution produces different etch figure on the surfaces of a sample.KOH-based solutions produce rectangular pit s rather than square pits.The etch pits elongate in [1 1 0] direction,indicating asymmetric etching behavior in the two orthogonal 〈110〉 directions.An explanation based on relative reactivity o f the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution w ould be more suitable than molten KOH and the two acids for the evaluation of st acking faults in c-GaN epilayers.关键词
立方相GaN/MOVPE/湿法腐蚀/非对称性Key words
cubic GaN/MOVPE/wet etching/asymmetry分类
信息技术与安全科学引用本文复制引用
沈晓明,冯志宏,冯淦,付羿,张宝顺,孙元平,张泽洪,杨辉..GaN/GaAs(001)外延薄膜的湿法腐蚀特性[J].半导体学报,2002,23(7):707-712,6.基金项目
国家自然科学基金(批准号:69825107),NSFC-RGC联合基金(批准号:5001161953,N-HKU 028/00)资助项目 （批准号:69825107）
