半导体学报2009，Vol.30Issue(8)：71-77,7.DOI:10.1088/1674-4926/30/8/084005
Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization
Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization
Fu Jun1
作者信息
- 1. Tsinghua National Laboratory for Information Science and Technology TNList,Institute of Microelectronics,Tsinghua University,Beijing 100084,China
- 折叠
摘要
Abstract
ter extraction method is further validated by comparing the modeled and simulated S-parameters as a function of frequency.关键词
SiGe/heterojunction bipolar transistors/small-signal/model/parameter extractionKey words
SiGe/heterojunction bipolar transistors/small-signal/model/parameter extraction分类
信息技术与安全科学引用本文复制引用
Fu Jun..Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization[J].半导体学报,2009,30(8):71-77,7.
