发光学报2005，Vol.26Issue(1)：72-76,5.
侧向外延法生长的高质量GaN及其外延缺陷的观察
High Quality GaN Grown by Epitaxial Lateral Overgrowth Technique and Epitaxial Defects Observation
摘要
Abstract
High quality GaN is grown by epitaxial lateral overgrowth(ELO) technique on SiO2-pattemed GaN "template". The results from luminescence microscope observation reveal that nucleation happens on the SiO2 mask. After the thickness reaches about 4.5 μm, the coalescence starts. The lateral growth rate is almost the same as the vertical growth rate. Voids are formed on all of the SiO2 mask area. ELO GaN is etched in molten KOH for 13 min at 240 ℃.The threading dislocation density is reduced to almost zero in the area on mask. And the threading dislocation density is still high in the area on windows. It is the order of 108cm-2. Also we found that the qualities in masks area for samples with different window area size are similar and have no relation with window area size. The room temperature photoluminescence (PL) results indicate that the stress in ELO GaN has been released partially.关键词
氮化镓/侧向外延生长/金属有机化学气相沉积Key words
GaN/ELO/MOCVD分类
数理科学引用本文复制引用
杨志坚,李忠辉,陈志忠,秦志新,于彤军,童玉珍,张国义,胡晓东,章蓓,陆敏,陆羽,潘尧波,张振声,任谦,徐军..侧向外延法生长的高质量GaN及其外延缺陷的观察[J].发光学报,2005,26(1):72-76,5.基金项目
国家自然科学基金(60276010) （60276010）
国家"863"计划(2001AA313060,2001AA313110,2001AA313140)资助项目 （2001AA313060,2001AA313110,2001AA313140）
