发光学报2005，Vol.26Issue(6)：737-742,6.
以LiF修饰阴极的有机电致发光器件性能的提高
Performance Enhancement by Modification of Cathode with a Thin LiF Layer in OELDs
摘要
Abstract
A model for inorganic semiconductor has been presented to calculate the J-V characteristics of organic electroluminescent devices (OELDs). The additional dipole energy introduced by inserting a thin LiF layer at metal/organic interface significantly decreases the potential barrier for electrons injection and the turn-on voltage of OELD. The charge carriers injection has been balanced, and then the performance of OELD has been greatly enhanced. By detailed numerical calculation, it has been found that the optimal thickness of inserted LiF should be in the range of 1.5～5.0 nm, too thick or too thin LiF will increase the turn-on voltage of OELD and degrade its performance. It has been proved that this model is proper to explain the performance enhancement of OELDs via modification of electrode with LiF.关键词
有机电致发光器件/电极修饰/界面偶极子Key words
OLEDs/electrode modification/interface dipole分类
信息技术与安全科学引用本文复制引用
黄永辉,李宏建,代国章,谢强,潘艳芝,戴小玉..以LiF修饰阴极的有机电致发光器件性能的提高[J].发光学报,2005,26(6):737-742,6.基金项目
湖南省杰出青年基金(03JJY1008) （03JJY1008）
中国博士后科学基金( 2004035083) （ 2004035083）
中南大学科学基金(0601059)资助项目 Projects supported by the Distinguished Youth Foundation of Hunan Province, China (03JJY1008) （0601059）
the Science Foundation for Post-doctorate of China (2004035083) （2004035083）
the Science Foundation of Central South University(0601059) （0601059）
