中山大学学报(自然科学版)2003，Vol.42Issue(z1)：75-77,3.
PECVD氮化硅薄膜的沉积和退火特性
Characterization of As-deposited and Annealing SiN Films Deposited by Plasma Enhanced Chemical Vapour Deposition
李艳 1励旭东 1许颖 2王文静 2顾亚华 1赵玉文 2卢殿通1
作者信息
- 1. 北京师范大学低能核物理研究所,北京100875
- 2. 北京市太阳能研究所,北京100083
- 折叠
摘要
Abstract
Silicon nitride (SiN) thin films were deposited by PECVD (Plasma Enhanced Chemical Vapour Deposition) of silane (SiH4) and ammonia (NH3) reactants. Subsequently they were annealed in a furnace or rapid thermal processing (RTP) on different conditions (temperature, time and ambient). SiN thin films are used not only as very efficient antireflection coating but also as surface and bulk passivation on silicon solar cells. The characterization of SiN thin films was studied by spectral ellipsometry, reflection spectra, infrared absorption spectroscopy (IR) and quasi-steady state photoconductance (QSSPC) measurements. It was found by means of spectral ellipsometry that the thickness of SiN films decreased and the refractive index increased as the annealing temperature increased, which were most likely due to the more and more compact structure of SiN films. The reflection index was also investigated. There was significant hydrogen incorporation as well as the characteristic Si-N bands in the IR spectra. The hydrogen content in SiN thin films can be determined followed by integration of Si-H and N-H absorption bands. The effective minority carrier lifetimes of the samples were measured by QSSPC. The efficiency of SiN passivation was related with hydrogen content.关键词
氮化硅/PECVD/退火Key words
silicon nitride/PECVD/annealing分类
化学化工引用本文复制引用
李艳,励旭东,许颖,王文静,顾亚华,赵玉文,卢殿通..PECVD氮化硅薄膜的沉积和退火特性[J].中山大学学报(自然科学版),2003,42(z1):75-77,3.
