半导体学报2006，Vol.27Issue(5)：774-777,4.
1V以下基于Vgs权重的CMOS恒压源
Sub-1V CMOS Voltage Reference Based on Weighted Vgs
张洵 1王鹏 1靳东明1
作者信息
- 1. 清华大学微电子学研究所,北京,100084
- 折叠
摘要
Abstract
We propose a voltage reference based on the weighted difference between the gate-source voltages of an nMOS and a pMOS operating in their saturation regions.No diodes or parasitic bipolar transistors are used.The circuit is simulated and fabricated with SMIC 0.18μm mixed-signal technology,and our measurements demonstrate that its temperature coefficient is 44ppm/℃ and its PSRR is -46dB.It works well when Vdd is above 650mV.The active area of the circuit is about 0.05mm2.关键词
恒压源/温度系数/电源电压抑制比Key words
voltage reference/temperature coefficient/power supply rejection ratio分类
信息技术与安全科学引用本文复制引用
张洵,王鹏,靳东明..1V以下基于Vgs权重的CMOS恒压源[J].半导体学报,2006,27(5):774-777,4.
