物理学报2001，Vol.50Issue(4)：775-778,4.
Zn0.04Cd0.96Te中深能级的红外光电导谱研究
INFRARED PHOTOCONDUCTIVITY SPECTRA OF DEEP LEVELS IN Zn0.04Cd0.96Te
摘要
Abstract
The infrared photoconductivity spectroscopy has been employed to investigate the deep levels in semi-insulating p-type Zn0.04Cd0.96Te. At the temperature ranging between 4.2 and 165K, photoconductivity peaks at 0.24，0.34，0.38，0.47，0.55 and 0.80eV are observed. In conjunction with the photoluminescence measurement of the sample at 4.2K, the characteristics of the deep levels related to the photoconductivity peaks are discussed.关键词
ZnxCd1-xTe,光电导,杂质,深能级分类
数理科学引用本文复制引用
袁先漳,裴慧元,陆卫,李宁,史国良,方家熊,沈学础..Zn0.04Cd0.96Te中深能级的红外光电导谱研究[J].物理学报,2001,50(4):775-778,4.基金项目
国家重点基础研究专项基金(批准号：G1998061404)和国家自然科学基金(批准号：10074068)资助的课题. （批准号：G1998061404）
