半导体学报2004，Vol.25Issue(7)：778-783,6.
包含衬底电流的LDD MOSFET输出I-V特性的经验模型分析
A Novel Empirical Model of I-V Characteristics for LDD MOSFET Including Substrate Current
摘要
Abstract
A compact model for LDD MOSFET is proposed,which involves the hyperbolic-tangent function description and the physics of device with emphasis on the substrate current modeling.The simulation results demonstrate good agreement with measurement,and show that deep submicron LDD MOSFET has larger substrate current than submicron device does.The improved model costs low computation consumption,and is effective in manifestation of hot carrier effect and other effects in deep submicron devices,in turn is suitable for design and reliability analysis of scaling down devices.关键词
轻掺杂漏MOS场效应管/衬底电流/热载流子效应/深亚微米Key words
LDD MOSFET/substrate current/hot carrier effect/deep submicron分类
信息技术与安全科学引用本文复制引用
Yu Chunli,Hao Yue,Yang Lin'an,于春利,郝跃,杨林安..包含衬底电流的LDD MOSFET输出I-V特性的经验模型分析[J].半导体学报,2004,25(7):778-783,6.基金项目
国防重大预研基金资助项目(批准号:8.5.4.3) （批准号:8.5.4.3）
