半导体学报2002，Vol.23Issue(8)：794-799,6.
非晶硅薄膜瞬态光电导的光致变化
Light-Induced Changes in a-Si∶H Films Studied by Transient Photoconductivity
摘要
Abstract
Light induced changes in a-Si∶H films are investigated by transient photoconductivity.The transient photoconductivity decay data can neither be fit well by common power-law for transient photocurrent in amorphous semiconductors,nor by stretched exponential rule for transient decay from the steady state in photoconductivity.Instead,the data are fit fairly well with a sum of two exponential functions.The results show that the long time decay is governed by deep traps rather than band tail states,and two different traps locating separately at 0.52 and 0.59eV below Ec are responsible for the two exponential functions.They are designated as negatively charged dangling bond D- centers.The light-induced changes in photoconductivity are attributed mainly to the decrease in electron lifetime caused by the increase of recombination centers after light soaking.关键词
非晶硅/瞬态光电导/光致变化Key words
amorphous silicon/transient photoconductivity/light-induced change分类
信息技术与安全科学引用本文复制引用
张世斌,孔光临,徐艳月,王永谦,刁宏伟,廖显伯..非晶硅薄膜瞬态光电导的光致变化[J].半导体学报,2002,23(8):794-799,6.基金项目
国家重点基础研究资助项目(No.G2000028201) （No.G2000028201）
