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用模拟退火算法从S参数提取HFET小信号等效电路模型参数

陈俊 刘训春

半导体学报2001,Vol.22Issue(1):79-82,4.
半导体学报2001,Vol.22Issue(1):79-82,4.

用模拟退火算法从S参数提取HFET小信号等效电路模型参数

HFET Small Signal Model Extraction from S Parameters Using Simulated Annealing Algorithm

陈俊 1刘训春1

作者信息

  • 1. 中国科学院微电子研究和发展中心
  • 折叠

摘要

Abstract

In the design of microwave devices and integrated circuits,it is very important to extract the HFET small signal equalized circuit model accurately.The solution of HFET model extraction with high quality using the simulated annealing algorithm is obtained.The solution is the global optimum without any influence of the initial value on it.What's more,the method avoids the non-unique solution occuring frequently when the local optimum algorithm is used.Provided that the value of gate resistance is acquired from measurement,the precision of the solution can be improved further.The method can also be used to extract the model parameters of HBT,capacitor and inductor.

关键词

参数提取/模拟退火算法/HFET/S参数/小信号等效电路

分类

信息技术与安全科学

引用本文复制引用

陈俊,刘训春..用模拟退火算法从S参数提取HFET小信号等效电路模型参数[J].半导体学报,2001,22(1):79-82,4.

半导体学报

OA北大核心CSCD

1674-4926

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