中国电子科技2006，Vol.4Issue(1)：8-11,4.
A New CMOS Current Reference with High Order Temperature Compensation
A New CMOS Current Reference with High Order Temperature Compensation
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作者信息
- 1. School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China Chengdu 610054 China;School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China Chengdu 610054 China;School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China Chengdu 610054 China;School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China Chengdu 610054 China
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摘要
Abstract
A new high order CMOS temperature compensated current reference is proposed in this paper, which is accomplished by two first order temperature compensation current references. The novel circuit exploits the temperature characteristics of integrated-circuit resistors and gate-source voltage of MOS transistors working in weak inversion. The proposed circuit, designed with a 0.6 (m standard CMOS technology, gives a good temperature coefficient of 31ppm/℃ [(50～100℃] at a 1.8 V supply, and also achieves line regulation of 0.01%/V and (120 dB PSR at 1 MHz. Comparing with other presented work, the proposed circuit shows better temperature coefficient and Line regulation.关键词
current reference/temperature-compensation/weak inversion/poly resistorKey words
current reference/temperature-compensation/weak inversion/poly resistor分类
信息技术与安全科学引用本文复制引用
..A New CMOS Current Reference with High Order Temperature Compensation[J].中国电子科技,2006,4(1):8-11,4.
