红外与毫米波学报2005，Vol.24Issue(2)：81-83,3.
分子束外延HgCdTe薄膜As掺杂P型激活研究
P-TYPE ACTIVATION RESEARCH OF As-DOPING IN MBE HgCdTe FILMS
摘要
Abstract
The study on As4-doped HgCdTe epilayers grown by MBE was presented. The electrical activation of arsenic impurities was achieved by annealing that caused As to occupy Te sites. By using the secondary ion mass spectrometry (SIMS) and Hall measurements on the in situ arsenic doped HgCdTe epilayers, the results show that P-type MBE HgCdTe can be obtained by doping with As4 source and annealing with high temperature.关键词
砷掺杂/退火/分子束外延/碲镉汞Key words
As doping/anneal/MBE/HgCdTe分类
信息技术与安全科学引用本文复制引用
吴俊,徐非凡,巫艳,陈路,于梅芳,何力..分子束外延HgCdTe薄膜As掺杂P型激活研究[J].红外与毫米波学报,2005,24(2):81-83,3.基金项目
The project supported by the National Natural Science Foundation of China (60221502) （60221502）
