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80 Gb/s 2 : 1 multiplexer in 0.13-μm SiGe BiCMOS technology

赵衍 王志功 李伟

半导体学报2009,Vol.30Issue(2):81-84,4.
半导体学报2009,Vol.30Issue(2):81-84,4.DOI:10.1088/1674-4926/30/2/025008

80 Gb/s 2 : 1 multiplexer in 0.13-μm SiGe BiCMOS technology

80 Gb/s 2 : 1 multiplexer in 0.13-μm SiGe BiCMOS technology

赵衍 1王志功 1李伟1

作者信息

  • 1. Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China
  • 折叠

摘要

Abstract

This work presents an ultra-high speed 2 : 1 multiplexer (MUX) in a SiGe BiCMOS technology with fT = 103 GHz. To boost the operating speed, the system scheme is optimized including a 2 : 1 selector circuit directly driving an external 50 Ω load, and two wide-band data buffers and one clock buffer in the input stage. The chip exhibited an open eye at 80 Gb/s with a 160 mV single-ended voltage swing.

关键词

Gilbert cell/ multiplexer/ selector/ ultrahigh-speed integrate circuit/ wideband buffer

Key words

Gilbert cell/ multiplexer/ selector/ ultrahigh-speed integrate circuit/ wideband buffer

分类

信息技术与安全科学

引用本文复制引用

赵衍,王志功,李伟..80 Gb/s 2 : 1 multiplexer in 0.13-μm SiGe BiCMOS technology[J].半导体学报,2009,30(2):81-84,4.

半导体学报

OA北大核心CSCDCSTPCDEI

1674-4926

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