红外与毫米波学报2008，Vol.27Issue(2)：81-85,5.
InP基In0.53Ga0.47As光电探测器的量子效率优化
QUANTUM EFFICIENCY OPTIMIZATION OF InP-BASED In0.53Ga0.47As PHOTODETECTORS
摘要
Abstract
A modified physical model on the optical response of InP-based In0.53Ga0.47As PIN photodetectors was presented. By introducing a collecting factor, the optical response and quantum efficiency were simulated. The influences of device parameters on quantum efficiency of typical In0.53Ga0.47As/InP PIN photodetectors under both front and backside illuminated conditions were investigated by using our model. Furthermore, two modified InGaAs/InP PD structures for back-illumination were proposed, and the optimal structural parameters were discussed.关键词
短波红外/光伏型探测器/InGaAs/量子效率Key words
short-wave-infrared/ photovoltaic detectors/ InGaAs/ quantum efficiency分类
信息技术与安全科学引用本文复制引用
田招兵,顾溢,张永刚..InP基In0.53Ga0.47As光电探测器的量子效率优化[J].红外与毫米波学报,2008,27(2):81-85,5.基金项目
Knowledge innovation program of Chinese Academy of Sciences, Shanghai STC Project (06ZR14104) and SIMTEC Project （06ZR14104）
