半导体学报2007，Vol.28Issue(6)：829-832,4.
应用于C-X-Ku波段的宽带功率放大器
Broadband MMIC Power Amplifier for C-X-Ku-Band Applications
摘要
Abstract
A three-stage MMIC power amplifier operating from 6 to 18GHz is fabricated using 0.25μm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT).The amplifier is fully monolithic,with all matching,biasing,and DC block circuitry included on the chip.The power amplifier has an average power gain of 19dB over 6～18GHz.At operation frequencies from 6 to 18GHz,the output power is above 33.3dBm,and the maximum output power of the MMIC is 34.7dBm at 10GHz.The input return loss is less than -10dB and the output return is less than -6dB over operating frequency.This power amplifier has,to our knowledge,the best power gain flatness reported at C-X-Ku-band applications.关键词
砷化镓/赝配高电子迁移率晶体管/微波单片集成电路/功率放大器/C-X-Ku波段Key words
GaAs/PHEMT/MMIC/power amplifier/C-X-Ku broadband分类
电子信息工程引用本文复制引用
张书敬,杨瑞霞,张玉清,高学邦,杨克武..应用于C-X-Ku波段的宽带功率放大器[J].半导体学报,2007,28(6):829-832,4.基金项目
河北省自然科学基金(批准号:F2007000098)和天津市自然科学基金(批准号:07JCZDJC06100)资助项目 Project supported by the Natural Science Foundation of Hebei Province (No.F2007000098) and the Natural Science Foundation of Tianjin(No.07JCZDJC06100) （批准号:F2007000098）
