半导体学报2008，Vol.29Issue(5)：832-835,4.
X波段低损耗高隔离开关应用的GaAs PIN二极管
GaAs PIN Diodes for X-Band Low Loss and High Isolation Switches
摘要
Abstract
GaAs PIN diodes optimized for X-band low loss and high isolation switch application are presented. The impactof diode physical characteristics and electrical parameters on switch performance is discussed. A new structure for GaAsPIN diodes is proposed and the fabrication process is described. GaAs PIN diodes with an on-state resistance of <2. 2Ω andoff-state capacitance <20fF in the range of 100MHz to 12.1GHz are obtained.关键词
GaAs PIN二极管/低损耗/高隔离/开关Key words
GaAs PIN diodes/ low-loss/ high-isolation/ switch分类
信息技术与安全科学引用本文复制引用
吴茹菲,张海英,尹军舰,张健,刘会东,刘训春..X波段低损耗高隔离开关应用的GaAs PIN二极管[J].半导体学报,2008,29(5):832-835,4.基金项目
Project supposed by the National Natural Science Foundation of China (No. 10002909) and the State Key Development Program for Basic Research of China (No. G2002CB311901) （No. 10002909）
国家自然科学基金(批准号:10002909)和国家重点基础研究发展规划(批准号:G2002CB311901)资助项目 （批准号:10002909）
