人工晶体学报2005，Vol.34Issue(5)：833-837,5.
c面白宝石衬底表面形貌对气相传输平衡法制备的γ-LiAlO2层质量的影响
Effect of Surface Morphology of c-plane Sapphire Substrate on Quality of γ-LiAlO2 Layer Fabricated by Vapor Transport Equilibration Technique
彭观良 1李抒智 2庄漪 1邹军 1王银珍 1刘世良 2周国清 1周圣明 2徐军 1干福熹2
作者信息
- 1. 中国科学院上海光学精密机械研究所,上海,201800
- 2. 中国科学院研究生院,北京,100039
- 折叠
摘要
Abstract
A single-phase γ-LiAlO2 layer was successfully fabricated on (0001) sapphire by vapor transport equilibration (VTE) technique. The effects of surface morphology of c-plane sapphire substrate on the quality of γ-LiAlO2 layer were investigated. We have found and verified that the surface roughness and annealing treatment of sapphire are two essential factors to affect γ-LiAlO2 layer quality on the sapphire substrate. To grow high-quality γ-LiAlO2 layer,a moderate surface roughness of sapphire substrate is suitable. The annealing treatment of sapphire substrate deteriorates the oriented growth of the γ-LiAlO2 layer on the sapphire. And the possible mechanism involved was discussed.关键词
白宝石/γ-LiAlO2/气相传输平衡/GaN/衬底Key words
sapphire/γ-LiAlO2/vapor transport equilibration (VTE)/GaN/substrate分类
数理科学引用本文复制引用
彭观良,李抒智,庄漪,邹军,王银珍,刘世良,周国清,周圣明,徐军,干福熹..c面白宝石衬底表面形貌对气相传输平衡法制备的γ-LiAlO2层质量的影响[J].人工晶体学报,2005,34(5):833-837,5.
