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掺杂室沉积本征微晶硅材料及其在太阳能电池中的应用

孙福河 张德坤 耿新华 熊绍珍 张晓丹 赵颖 王世峰 韩晓艳 李贵军 魏长春 孙建 侯国付

半导体学报2008,Vol.29Issue(5):855-858,4.
半导体学报2008,Vol.29Issue(5):855-858,4.

掺杂室沉积本征微晶硅材料及其在太阳能电池中的应用

Doped-Chamber Deposition of Intrinsic Microcrystalline Silicon Thin Films and Its Application in Solar Cells

孙福河 1张德坤 2耿新华 3熊绍珍 4张晓丹 4赵颖 4王世峰 4韩晓艳 4李贵军 4魏长春 4孙建 4侯国付4

作者信息

  • 1. 南开大学光电子薄膜器件与技术研究所,天津300071
  • 2. 南开大学光电子薄膜器件与技术天津市重点实验室,天津300071
  • 3. 光电信息技术科学教育部重点实验室(南开大学,天津大学),天津300071
  • 折叠

摘要

Abstract

A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemicalvapor deposition (VHF-PECVD) at different silane concentrations in a P chamber. Through analysis of the structural andelectrical properties of these materials,we conclude that the photosensitivity slightly decreased then increased as the silaneconcentration increased,while the crystalline volume fraction indicates the opposite change. Results of XRD indicate thatthin films have a (220) preferable orientation under certain conditions. Microcrystalline silicon solar cells with conversionefficiency 4. 7% and micromorph tandem solar cells 8.5% were fabricated by VHF-PECVD (p layer and i layer of micro-crystalline silicon solar cells were deposited in P chamber) ,respectively.

关键词

甚高频等离子体增强化学气相沉积/本征微晶硅/太阳能电池

Key words

VHF-PECVD/ intrinsic microcrystalline silicon/ solar cells

分类

信息技术与安全科学

引用本文复制引用

孙福河,张德坤,耿新华,熊绍珍,张晓丹,赵颖,王世峰,韩晓艳,李贵军,魏长春,孙建,侯国付..掺杂室沉积本征微晶硅材料及其在太阳能电池中的应用[J].半导体学报,2008,29(5):855-858,4.

基金项目

Project supported by the National High Technology Research and Development Program of China (No. 2007AA05Z436),the State Key Development Program for Basic Research of China (Nos. 2006CB202602,2006CB202603),the National Natural Science Foundation of China(No. 60506003),the Starting Project of Nankai University (No. J02031), the International Cooperation Project between China-Greece Government (No. 2006DFA62390), and the Program for New Century Excellent Talents in University of China (NCET) (No. 2007AA05Z436)

国家高技术研究发展规划(批准号:2007AA05ZA36),国家重点基础研究发展规划(批准号:2006CB202602,2006CB202603),国家自然科学基金(批准号:60506003),南开大学博士启动基金(批准号:J02031)以及科技部国际合作重点项目(批准号:2006DFA62390)和教育部新世纪人才计划资助项目 (批准号:2007AA05ZA36)

半导体学报

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