材料科学与工程学报2007，Vol.25Issue(6)：867-870,4.
N型Bi2Te2.5Se0.5热电薄膜的电阻率与膜厚和温度的关系
Thickness and Temperature Dependence of Electrical Resistivity of n-type Bi2Te2.5Se0.5 Thermoelectric Thin Films
摘要
Abstract
N-type Bi2Te2.5 Se0.5 thermoelectric thin films with thickness in the range 50-400nm have been deposited by flash evaporation method on glass substrates at 473K. The structure, composition and morphology of the deposited thin films were carried out by Xray diffraction (XRD), energy-dispersive X-ray analysis (EDXA) and field emission scanning electron microscope (FE-SEM) respectively.The thickness and temperature dependence of electrical resistivity of the thin films were studied in the temperature range 300-350K.关键词
电阻率/Bi2Te2.5Se0.5薄膜/瞬间蒸发法Key words
electrical resistivity/ Bi2Te2.5Se0.5 thin film/ flash evaporation分类
信息技术与安全科学引用本文复制引用
段兴凯,杨君友,朱文,肖承京..N型Bi2Te2.5Se0.5热电薄膜的电阻率与膜厚和温度的关系[J].材料科学与工程学报,2007,25(6):867-870,4.基金项目
National Natural Science Foundation of China under Grant (50401008), the Specialized Prophasic Research Project of Key Basic Research Plan(2004CCA03200) of China. （50401008）
