| 注册
首页|期刊导航|半导体学报|C波段GaAs PIN二极管单片单刀单掷开关

C波段GaAs PIN二极管单片单刀单掷开关

吴茹菲 张健 尹军舰 张海英

半导体学报2008,Vol.29Issue(5):879-882,4.
半导体学报2008,Vol.29Issue(5):879-882,4.

C波段GaAs PIN二极管单片单刀单掷开关

A C-Band Monolithic GaAs PIN Diode SPST Switch

吴茹菲 1张健 1尹军舰 1张海英1

作者信息

  • 1. 中国科学院微电子研究所,北京,100029
  • 折叠

摘要

Abstract

A monolithic single pole single throw (SPST) switch is developed with GaAs PIN diode technology from IME-CAS. A novel small signal model of a GaAs PIN diode is developed for circuit simulation. The switch features an on-stateinsertion loss of less than 1.6dB and a return loss of greater than 10dB while maintaining an off-state isolation of greaterthan 23dB from 5.5 to 7. 5GHz. The measured ldB power gain compression point is about 20dBm.

关键词

C波段/单刀单掷/开关/GaAs/PIN二极管

Key words

C-band/ SPST/ switches/ GaAs/ PIN diodes

分类

电子信息工程

引用本文复制引用

吴茹菲,张健,尹军舰,张海英..C波段GaAs PIN二极管单片单刀单掷开关[J].半导体学报,2008,29(5):879-882,4.

基金项目

Project supposed by the National Natural Science Foundation of China (No. 10002909) (No. 10002909)

国家自然科学基金资助项目(批准号:10002909) (批准号:10002909)

半导体学报

OA北大核心CSCDCSTPCD

1674-4926

访问量0
|
下载量0
段落导航相关论文