半导体学报2008，Vol.29Issue(5)：889-892,4.
130nm以下光刻禁止光学空间周期的系统性研究
A Systematic Study of the Forbidden Pitch in the CD Through-Pitch Curve for Beyond 130nm
摘要
Abstract
The forbidden pitch "dip" in the critical dimension (CD) through the pitch curve is a well-known optical prox-imity effect. The CD and CD process window near the "dip" ,usually found near a pitch range of 1.1 to 1.4 wavelength/NA (numerical aperture), is smaller when compared with other pitches. This is caused by inadequate imaging contrast foran unequal line and space grating. Although this effect is relatively well-known, its relationship with typical process condi-tion parameters,such as the effective image blur caused by the photo-acid diffusion during the post exposure bake or theaberration in the imaging lens,has not been systematically studied. In this paper,we will examine the correlation betweenthe image blur and the effect on the CD, including the decrease in the CD value (the depth of the "dip") and the CDprocess window. We find that both the decrease in the CD value and the focus latitude near the forbidden pitch correlatevery well with the effective Gaussian image blur. Longer effective diffusion length correlates well with a smaller processwindow and a deeper CD "dip". We conclude that the dip depth is very sensitive to the change in image contrast.关键词
禁止光学空间周期/掩模版误差因子/有效光刻胶扩散长度/光学临近效应修正/离轴照明/深紫外线Key words
forbidden pitch/ effective resist diffusion length/ OPC/ OAI/ deep-UV分类
电子信息工程引用本文复制引用
赵宇航,朱骏,曹永峰..130nm以下光刻禁止光学空间周期的系统性研究[J].半导体学报,2008,29(5):889-892,4.基金项目
Project supposed by the Foundation of Shanghai Science & Technology Committee (No. 075007033) （No. 075007033）
上海市科委国际合作资助项目(批准号 （）
075007033) （）
