半导体学报2003，Vol.24Issue(9)：907-910,4.
高跨导AlGaN/GaN HEMT器件
High Transconductance AlGaN/GaN HEMT Growth on Sapphire Substrates
肖冬萍 1刘键 1魏珂 1和致经 1刘新宇 1吴德馨1
作者信息
- 1. 中国科学院微电子中心,化合物半导体器件及电路实验室,北京,100029
- 折叠
摘要
Abstract
The fabrication and characterization of AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates by MBE are described.These 1.0μm gate-length devices exhibit a maximum drain current density as high as 1000mA/mm and a maximum transconductance of 198mS/mm.In sharp contrast to high current density HEMT fabricated on sapphire substrates,the extrinsic transconductance versus gate-to-source voltage profiles exhibit the broad plateaus over a large voltage swing.A unity gain cutoff frequency (fT) of 18.7GHz and a maximum frequency of oscillation (fmax) of 19.1GHz are also obtained.关键词
AlGaN/GaN/HEMTs/跨导Key words
AlGaN/GaN/high electron mobility transistors/transconductance分类
信息技术与安全科学引用本文复制引用
肖冬萍,刘键,魏珂,和致经,刘新宇,吴德馨..高跨导AlGaN/GaN HEMT器件[J].半导体学报,2003,24(9):907-910,4.
