半导体学报2004，Vol.25Issue(8)：908-912,5.
低偏置电压工作的自对准InGaP/GaAs功率异质结双极晶体管
Self-Aligned InGaP/GaAs Power HBTs with a Low Bias Voltage
摘要
Abstract
A self-aligned InGaP/GaAs power HBTs for L-band power amplifier with low bias voltage are described.Base emitter metal self-aligning ,air-bridge ,and wafer-thinning are used to improve microwave power performance.A power HBT with double size of emitter of (3μm× 15μm) × 12 is fabricated. When the packaged HBT operates in class AB at a collector bias of 3V,a maximum 23dBm output power with 45% power added efficiency is achieved at 2GHz. The results show that the InGaP/GaAs power HBTs have great potential in mobile communication systems operating at low bias voltage.关键词
自对准/InGaP/功率双异质结晶体管/低偏置电压Key words
self-aligned/InGaP/power HBTs/low bias voltage分类
信息技术与安全科学引用本文复制引用
郑丽萍,孙海锋,狄浩成,樊宇伟,王素琴,刘新宇,吴德馨..低偏置电压工作的自对准InGaP/GaAs功率异质结双极晶体管[J].半导体学报,2004,25(8):908-912,5.基金项目
国家重点基础研究发展规划(批准号:2002CB311902),国家自然科学基金(批准号:60146001)及中国科学院知识创新工程资助项目 （批准号:2002CB311902）
