半导体学报2009，Vol.30Issue(5)：9-13,5.DOI:10.1088/1674-4926/30/5/052003
Downward uniformity and optical properties of porous silicon layers
Downward uniformity and optical properties of porous silicon layers
摘要
Abstract
Porous silicon (PS) samples were fabricated by pulse current etching using different times. The downward uniformity and optical properties of the PS layers have been investigated using reflectance spectroscopy, photoluminescence spectroscopy, and scanning electron microscopy (SEM). The relationship between the refractive index and the optical thickness of PS samples and the etching depth has been analyzed in detail. As the etching depth increases, the average refractive index decreases, indicating that the porosity becomes higher, and the formation rate of the optical thickness decreases. Meanwhile, the reflectance spectra exhibit less intense interference oscillations,which mean the uniformity and interface smoothness of the PS layers become worse. In addition, the intensity of PL emission spectra is slightly increased.关键词
porous silicon/uniformity/optical properties/photoluminescenceKey words
porous silicon/uniformity/optical properties/photoluminescence分类
信息技术与安全科学引用本文复制引用
Long Yongfu,Ge Jin..Downward uniformity and optical properties of porous silicon layers[J].半导体学报,2009,30(5):9-13,5.基金项目
Project supported by the National Natural Science Foundation of China and the Natural Science Foundation of Hunan Province (No.04JJ40031). （No.04JJ40031）
