半导体学报2002，Vol.23Issue(9)：914-920,7.
多晶硅微机械开关
Poly-Silicon Micromachined Switch
张正元 1温志渝 2徐世六 1张正番 2李开成 2黄尚廉2
作者信息
- 1. 重庆大学光电工程学院,重庆,400044
- 2. 模拟集成电路国家重点实验室,重庆,400060
- 折叠
摘要
Abstract
By using LPCVD SiO2 and poly-silicon as sacrificial layer and cantilever respectively,a poly-silicon micromachined RF MEMS(radio frequency microelectronic mechanical system) switch is fabricated.During the fabrication process,the stress of poly-silicon is released to prevent poly-silicon membrane from bending,and the issue of compatibility between RF switch and IC process technology is also resolved.The low residual tensile stress poly-silicon cantilever is obtained by the optimization.The switch is tested,and the preliminary test results show:the pull down voltage is 89V,and the switch speed is about 5μs.The switch provides the potential to build a new fully monolithic integrated RF MEMS for radar and communications applications.关键词
多晶硅微机械开关/悬臂梁/牺牲层/恢复力Key words
poly-silicon micromachined switch/cantilever/sacrificial layer/restoring force分类
信息技术与安全科学引用本文复制引用
张正元,温志渝,徐世六,张正番,李开成,黄尚廉..多晶硅微机械开关[J].半导体学报,2002,23(9):914-920,7.
