Effects of Rapid Thermal Annealing on Optical Properties of GaInNAs/GaAs Single Quantum Well Grown by Plasma-Assisted Molecular Beam EpitaxyOA北大核心CSCDCSTPCD
Effects of Rapid Thermal Annealing on Optical Properties of GaInNAs/GaAs Single Quantum Well Grown by Plasma-Assisted Molecular Beam Epitaxy
The effects of Rapid Thermal Annealing (RTA) on the optical properties of GaInNAs/GaAs Single Quantum Well (SQW) grown by plasma-assisted molecular beam epitaxy are investigated. Ion removal magnets were applied to reduce the…查看全部>>
The effects of Rapid Thermal Annealing (RTA) on the optical properties of GaInNAs/GaAs Single Quantum Well (SQW) grown by plasma-assisted molecular beam epitaxy are investigated. Ion removal magnets were applied to reduce the ion damage during the growth process and the optical properties of GaInNAs/GaAs SQW are remarkably improved.RTA was carried out at 650℃ and its effect was studied by the comparising the roomtemperature PhotoLuminescence (PL) spectra for…查看全部>>
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Department of Physics, Peking University, Beijing 100871, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,The Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,The Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,The Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,The Chinese Academy of Sciences, Beijing 100083, China
电子信息工程
GaInNAsrapid thermal annealingphotoluminescencemolecular beam epitaxy
GaInNAsrapid thermal annealingphotoluminescencemolecular beam epitaxy
《半导体学报》 2000 (10)
947-978,32
Project Supported by Major State Basic Research Program Under Grant No. G2000036603 and by National Natural Science Foundation of China Under Grant No. 69988005,69896260,69789802,69776036 and 19774010.
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