半导体学报2006，Vol.27Issue(6)：959-962,4.
用于高速电路的InP基共振隧穿二极管制作
Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications
摘要
Abstract
A high performance AlAs/In0.53 Ga0.47 As/InAs resonant tunneling diode (RTD) on InP substrate is fabricated by inductively coupled plasma etching. This RTD has a peak-to-valley current ratio (PVCR) of 7. 57 and a peak current density Jp = 39.08kA/cm2 under forward bias at room temperature. Under reverse bias, the corresponding values are 7.93 and 34.56kA/cm2 . A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire. The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.关键词
共振隧穿二极管/感应耦合等离子体/I-V特性/高频Key words
resonant tunneling diode/inductively coupled plasma/current-voltage characteristics/high frequency分类
信息技术与安全科学引用本文复制引用
马龙,黄应龙,张杨,王良臣,杨富华,曾一平..用于高速电路的InP基共振隧穿二极管制作[J].半导体学报,2006,27(6):959-962,4.基金项目
国家高技术研究发展计划资助项目(批准号:2003AA302750)Project supported by the National High Technology Research and Development Program of China(No. 2003AA302750) （批准号:2003AA302750）
