人工晶体学报2007，Vol.36Issue(5)：962-966,5.
6H-SiC衬底片的表面处理
Surface Treatment of 6H-SiC Substrates
摘要
Abstract
6H-SiC is a more promising substrate than sapphire used for the growth of GaN high power devices. The influence of surface treatments such as lapping, chemi-mechanical polishing on surface properties of 6 H-SiC substrates was studied. Substrate surfaces were investigated by means of optical microscopy, atomic force microscopy, Raman spectroscopy and Rutherford backscattering spectrometry.The results show that the surface quality was improved after two-step chemi-mechanical polishing processes. Substrates after chemimechanical polishing have superior surface morphology, high transmission and least subsurface damage and the surface roughness (RMS) is 0.12nm. High quality GaN epitaxial layers on 6H-SiC substrates were obtained using a metal organic chemical vapor deposition growth technique.关键词
6H-SiC/衬底/表面处理/研磨/化学机械抛光Key words
6H-SiC/ substrate/ surface treatment/ lapping/ chemi-mechanical polishing分类
数理科学引用本文复制引用
陈秀芳,徐现刚,胡小波,杨光,宁丽娜,王英民,李娟,姜守振,蒋民华..6H-SiC衬底片的表面处理[J].人工晶体学报,2007,36(5):962-966,5.基金项目
This work supported by the National Natural Science Foundation of China(No.50472068) and Program for New Century Excellent Talents in University （No.50472068）
