半导体学报2006，Vol.27Issue(6)：963-965,3.
fT为77GHz的蓝宝石衬底0.25μm栅长AlGaN/GaN高电子迁移率功率器件
0.25μm Gate-Length AlGaN/GaN Power HEMTs on Sapphire with fT of 77GHz
郑英奎 1刘果果 1和致经 1刘新宇 1吴德馨1
作者信息
- 1. 中国科学院微电子研究所,北京,100029
- 折叠
摘要
Abstract
MOCVD-grown 0.25μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated on sapphire substrates. A peak extrinsic transconductance of 250mS/mm and a unity current gain cutoff frequency (fT) of 77GHz are obtained for a 0.25μm gate-length single finger device. These power devices exhibit a maximum drain current density as high as 1.07A/mm. On-chip testing yielded a continuous-wave output power of 27. 04dBm at 8GHz with an associated power-added efficiency of 26. 5% for an 80 × 10μm device.关键词
GaN/蓝宝石/HEMTKey words
GaN/sapphire substrate/high electron mobility transistor分类
信息技术与安全科学引用本文复制引用
郑英奎,刘果果,和致经,刘新宇,吴德馨..fT为77GHz的蓝宝石衬底0.25μm栅长AlGaN/GaN高电子迁移率功率器件[J].半导体学报,2006,27(6):963-965,3.
