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Development of Microwave SiGe Heterojunction Bipolar Transistors

半导体学报2000，Vol.21Issue(10)：970-973,4.
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半导体学报2000，Vol.21Issue(10)：970-973,4.

Development of Microwave SiGe Heterojunction Bipolar Transistors

Development of Microwave SiGe Heterojunction Bipolar Transistors

1

作者信息

  • 1. Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China
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摘要

Abstract

The microwave SiGe Heterojunction Bipolar Transistors (HBT) were fabricated by the material grown with home-made high vacuum/rapid thermal processing chemical vapor deposition equipment. The HBTs show good performance and industrial use value. The current gain is beyond 100;the breakdown voltage BVceo is 3.3V,and the cut-off frequency is 12.5GHz which is measured in packaged form.

关键词

SiGe/HBT

Key words

SiGe/HBT

分类

信息技术与安全科学

引用本文复制引用

..Development of Microwave SiGe Heterojunction Bipolar Transistors[J].半导体学报,2000,21(10):970-973,4.

基金项目

Project Supported by National Natural Science Foundation of China Under Grant No. 69836020 and 69476039 （）

半导体学报

OA北大核心CSCDCSTPCD

1674-4926

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