半导体学报2009，Vol.30Issue(8)：98-102,5.DOI:10.1088/1674-4926/30/8/084010
Effect of chemical polish etching and post annealing on the performance of silicon heterojunction solar cells
Effect of chemical polish etching and post annealing on the performance of silicon heterojunction solar cells
摘要
Abstract
ies resistance. An efficiency of 15.14% is achieved that represents the highest result reported in China for an amorphous/crystalline heterostructure solar cells based on the textured p-type substrates.关键词
HIT solar cells/chemical polishing/post annealing/HWCVDKey words
HIT solar cells/chemical polishing/post annealing/HWCVD分类
信息技术与安全科学引用本文复制引用
Jiang Zhenyu,Dou Yuhua,Zhang Yu,Zhou Yuqin,Liu Fengzhen,Zhu Meifang..Effect of chemical polish etching and post annealing on the performance of silicon heterojunction solar cells[J].半导体学报,2009,30(8):98-102,5.基金项目
Project supported by the National High Technology Research and Development Program of China (No. 2006AA05Z408), the State Key Development Program for Basic Research of China (No. 2006CD202601), and the Starting Fund of GUCAS (No. 065101BM03). （No. 2006AA05Z408）
