物理学报2001，Vol.50Issue(5)：981-985,5.
Au/PZT/BIT/p-Si异质结的制备与性能研究
PREPARATION AND CHARACTERIZATION OF THE Au/PZT/BIT/p-Si HETEROSTRUCTURE
摘要
Abstract
The Au/PZT/BIT/p-Si heterostructure was fabricated by pulsed laser deposition technique. The effect of introducing a BIT buffer layer between the PZT film s and Si substrate on the crystallinity, the ferroelectric characteristics and t he electrical characteristics of the ferroelectric film system, as well as the conductivity behavior of the Au/PZT/BIT/p-Si heterostructure were investigated. The PZT films deposited on p-Si with a BIT buffer layer were found to grow wit h a preferred orientation along(110) direction. In the case of identical thickne ss(400 nm) of ferroelectric layer, the PZT/BIT multilayer ferroelectric thin fi lm s showed a better ferroelectric property than PZT thin films. The clockwise rota t ional C-V hysteresis loop of the Au/PZT/BIT/p-Si heterostructure indicated that the PZT/BIT ferroelectric thin films had controlled the Si surface potenti a l and showed a characteristic of polarization-type switching. The current-vol t age (I-V) curves showed that the heterostructure was conductive only in the one voltage direction and the leakage currents are too low to identify in th e opposite direction. The conduction in low voltage region displays an ohmic beha vior and the current transportation in ferroelectric thin films at the high volt age region is ascribed to the space-charge limited current. The remnant polarization of the PZT/BIT films system remained tobe 90% of the initial value after 109 bipolar switching cycles.关键词
铁电薄膜/异质结构/脉冲激光沉积(PLD)分类
数理科学引用本文复制引用
王华,于军,董小敏,王耘波,周文利,赵建洪,周东祥..Au/PZT/BIT/p-Si异质结的制备与性能研究[J].物理学报,2001,50(5):981-985,5.基金项目
国家自然科学基金(批准号：69771024)资助的课题. （批准号：69771024）
