发光学报2007，Vol.28Issue(1)：99-103,5.
InGaN量子阱的微观特性
Micro Characteristics of InGaN/GaN Quantum Wells
摘要
Abstract
InGaN/GaN quantum well exhibits a series of unusual optical properties. However, the physics of quantum well on the micro scale is subjected to large uncertainties. Little is known on the discontinuities of energy band structure and local states on the atomic level in the case of different In atoms distribution in the InxGa1-xN layers caused by In compositional fluctuation and phase separation, which intensively alters the optical and electronic pro-perties. Using the efficient and accurate total energy and molecular-dynamics package VASP which is based on the density functional method, we performed the first principles calculations on InGaN/GaN quantum wells. The calcu-lated results exhibit discrete bands around the conduction band minimum and the valence band maximum that vary with the In atom distributions. Moreover, the local states with the discrete bands are likely to appear the quantum confined Stark effect in the InGaN/GaN interface enhanced by the polarization field in the crystal. The control and further understanding of those micro characteristics may lead to the improved performance of InGaN QWs.关键词
InGaN/量子阱/VASP/能带结构Key words
InGaN/quantum well/VASP/energy band structure分类
数理科学引用本文复制引用
林伟,李书平,康俊勇..InGaN量子阱的微观特性[J].发光学报,2007,28(1):99-103,5.基金项目
国家重点基础研究发展规划(001CB610505) （001CB610505）
国家自然科学基金(90206030, 60376015, 60336020,10134030) （90206030, 60376015, 60336020,10134030）
福建省自然科学基金(E0410007, 2004H054)资助项目Project supported by the Major State Basic Research Development Program of China Projects (001CB610505) （E0410007, 2004H054）
the National Nature Science Foundation of China(90206030, 60376015, 60336020, 10134030) （90206030, 60376015, 60336020, 10134030）
the Nature Science Foun-dation of Fujian Province (E0410007, 2004H054) （E0410007, 2004H054）
